8 Patents
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- US123155422025Memristor Element with a Magnetic Domain Wall in a Magnetic Free Layer Moved by Spin Orbit Torque, Synapse Element and Neuromorphic Processor Including the Same
Samsung Electronics Co., Ltd
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- US118347382023Sputtering Apparatus and Method of Fabricating Magnetic Memory Device Using the Same
Samsung Electronics Co., Ltd.
0 cites - US116597702023Semiconductor Device, Magnetoresistive Random Access Memory Device, and Semiconductor Chip Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
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