9 Patents
- US124396572025Confined Source/drain Epitaxy Regions and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123896492025Transistors with Stacked Semiconductor Layers as Channels
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123639932025Semiconductor Device Having Merged Epitaxial Features with Arc-like Bottom Surface and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120947782024Fin Field-effect Transistor Device and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120683952024Method for Forming an Undoped Region Under a Source/drain
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120574502024Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US119489712024Confined Source/drain Epitaxy Regions and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119087422024Semiconductor Device Having Merged Epitaxial Features with Arc-like Bottom Surface and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116521052023Epitaxy Regions with Large Landing Areas for Contact Plugs
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites