Jeffrey M. Leathersich

6 Patents

• US125979062026

  Doped Crystalline Piezoelectric Resonator Films and Methods of Forming Doped Single Crystalline Piezoelectric Resonator Layers on Substrates via Epitaxy

  Akoustis Technologies Corp.

  0 cites
• US125491502026

  Methods of Forming Epitaxial Alscn Resonators with Superlattice Structures Including Algan Interlayers and Varied Scandium Concentrations for Stress Control and Related Structures

  Akoustis Technologies Corp.

  0 cites
• US121020102024

  Methods of Forming Films Including Scandium at Low Temperatures Using Chemical Vapor Deposition to Provide Piezoelectric Resonator Devices And/or High Electron Mobility Transistor Devices

  Akoustis, Inc.

  0 cites
• US118568582023

  Methods of Forming Doped Crystalline Piezoelectric Thin Films via MOCVD and Related Doped Crystalline Piezoelectric Thin Films

  Akoustis, Inc.

  0 cites
• US118325212023

  Methods of Forming Group Iii-nitride Single Crystal Piezoelectric Thin Films Using Ordered Deposition and Stress Neutral Template Layers

  Akoustis, Inc.

  0 cites
• US116189682023

  Apparatus Including Horizontal Flow Reactor with a Central Injector Column Having Separate Conduits for Low-vapor Pressure Metalorganic Precursors and Other Precursors for Formation of Piezoelectric Layers on Wafers

  Akoustis, Inc.

  0 cites