Jeffery B. Hull

8 Patents

• US124329282025

  Vertical Transistor, Integrated Circuitry, Method of Forming a Vertical Transistor, and Method of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US121913542025

  Vertical Transistors Having at Least 50% Grain Boundaries Offset Between Top and Bottom Source/drain Regions and the Channel Region That Is Vertically Therebetween

  Micron Technology, Inc.

  0 cites
• US121131302024

  Transistor and Methods of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US120574932024

  Integrated Circuitry, Method Used in the Fabrication of a Vertical Transistor, and Method Used in the Fabrication of Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US118715822024

  Vertical Transistor, Integrated Circuitry, Method of Forming a Vertical Transistor, and Method of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US117770112023

  Integrated Circuitry, Method Used in the Fabrication of a Vertical Transistor, and Method Used in the Fabrication of Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US116888082023

  Transistor and Methods of Forming Integrated Circuitry

  Micron Technology, Inc.

  0 cites
• US116371752023

  Vertical Transistors

  Micron Technology, Inc.

  0 cites