44 Patents
- US126219932026Three-dimensional Semiconductor Memory Device, Electronic System Including the Same, and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125885162026Semiconductor Devices and Data Storage Systems Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US124904282025Semiconductor Device Including Vertical Memory Structure and Separation Structure Each Including Side Surface Slope Changing Portion and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124396022025Semiconductor Device Including Data Storage Pattern with Improved Retention Characteristics
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US124023072025Semiconductor Device and Data Storage System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123693242025Three-dimensional Semiconductor Memory Device and Electronic System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123639042025Three-dimensional Semiconductor Memory Device and Electronic System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123550032025Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123546592025Three-dimensional Semiconductor Memory Device and Electronic System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123025802025Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123025702025Semiconductor Device and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US122781652025Semiconductor Storage Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US121855432024Semiconductor Devices Comprising Crack Preventing Layers and Data Storage Systems Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121855482024Semiconductor Device Having Dummy Structures in a Peripheral Region and Data Storage System Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121675982024Three-dimensional Semiconductor Memory Devices, Methods of Manufacturing the Same, and Electronic Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121319952024Semiconductor Device and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121208822024Semiconductor Device and Electronic System Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120966372024Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US120439102024Integrated System Comprising Electrocatalysis Device of Glycerol and Chemical Catalysis Device of Biomass
Korea Research Institute Of Chemical Technology
0 cites - 0 cites
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- US118567702023Semiconductor Device, Method of Manufacturing the Same, and Massive Data Storage System Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118442142023Semiconductor Device and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117929942023Three-dimensional Memory Device Including a String Selection Line Gate Electrode Having a Silicide Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117912622023Semiconductor Device and Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US116160782023Three-dimensional Semiconductor Memory Devices Having a Source Structure That Overlaps a Buried Insulating Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US115945442023Semiconductor Devices with String Select Channel for Improved Upper Connection
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US115520982023Semiconductor Device Including Data Storage Pattern with Improved Retention Characteristics
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115520992023Vertical-type Nonvolatile Memory Device Including an Extension Area Contact Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites