Patents/Inventors

Jay William Strane

Wappingers Falls, NYUS24 patents

14 Patents

US126222522026
Backside Contacts for Source/drain Regions
International Business Machines Corporation
0 cites
US126158172026
Stacked FET with Low Parasitic-capacitance Gate
International Business Machines Corporation
0 cites
US125686692026
Placeholder Profile Formation for Backside Contact
International Business Machines Corporation
0 cites
US125576272026
Stacked FET with Bottom Epi Size Control and Wraparound Backside Contact
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125504202026
Top Contact Structures for Stacked Transistors
International Business Machines Corporation
0 cites
US125385652026
Self-aligned Bottom Spacer
International Business Machines Corporation
0 cites
US124462902025
Asymmetric Gate Extension in Stacked FET
International Business Machines Corporation
0 cites
US123567112025
Late Gate Extension
International Business Machines Corporation
0 cites
US123100902025
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US122680302025
Self-aligned C-shaped Vertical Field Effect Transistor
International Business Machines Corporation
0 cites
US121837402024
Stacked Field-effect Transistors
International Business Machines Corporation
0 cites
US119731252024
Self-aligned Uniform Bottom Spacers for VTFETS
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US116463732023
Vertical Field Effect Transistor with Bottom Spacer
International Business Machines Corporation
0 cites
US116159902023
CMOS Top Source/drain Region Doping and Epitaxial Growth for a Vertical Field Effect Transistor
International Business Machines Corporation
0 cites