2 Patents
- US119879002024Methods for Forming a Silicon Substrate with Reduced Grown-in Nuclei for Epitaxial Defects and Methods for Forming an Epitaxial Wafer
Globalwafers Co., Ltd.
0 cites - US119879012024Methods for Forming a Silicon Substrate with Reduced Grown-in Nuclei for Epitaxial Defects and Methods for Forming an Epitaxial Wafer
Globalwafers Co., Ltd.
0 cites