Patents/Inventors

Janbo Zhang

Quanzhou CityCN32 patents

29 Patents

US125881912026
Semiconductor Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US125138912025
Semiconductor Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US124777222025
Semiconductor Memory Device Comprises a Bit Line Having a Plurality of Pins Extending Toward a Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US124777532025
Semiconductor Device and Fabricating Method Thereof
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US123947142025
Semiconductor Device Including Dielectric Insert Structure Directly Under Buried Word Line and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US123896172025
Semiconductor Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US123746212025
Semiconductor Structure and Method of Manufacturing the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US123638852025
Semiconductor Memory Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US123425362025
Semiconductor Memory Device Having Buried Word Line with a Neck Profile Portion
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US122725942025
Semiconductor Device and Method of Fabricating the Same Having a Second Active Region Disposed at an Outer Side of a First Active Region
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US122740482025
Dynamic Random Access Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US122242832025
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US122257152025
Semiconductor Device Having Semiconductor Layers Disposed Between Upper Portions of the Isolation Structures and the Active Regions
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US122009232025
Method of Fabricating Semiconductor Device Having Bit Line Comprising a Plurality of Pins Extending Toward the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US121502912024
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US121333732024
Semiconductor Structure Including Capacitor and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US121144872024
Semiconductor Memory Device Having Bit Lines and Isolation Fins Disposed on the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US121006172024
Method of Manufacturing Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US119800182024
Semiconductor Device and Method of Fabricating the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US119105952024
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US118256442023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US118188802023
Semiconductor Structure Including Capacitor and Method for Forming the Same
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117841842023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117440622023
Semiconductor Device Having Bit Line Comprising a Plurality of Pins Extending Toward the Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US117069112023
Method of Fabricating Semiconductor Memory Having a Second Active Region Disposed at an Outer Side of a First Active Region
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US116769942023
Manufacturing Method of Semiconductor Device and Semiconductor Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US116658852023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US116109002023
Semiconductor Memory Device
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites
US116006222023
Method of Forming Semiconductor Memory Device Comprises a Bit Line Having a Plurality of Pins Extending Along a Direction Being Perpendicular to a Substrate
Fujian Jinhua Integrated Circuit Co., Ltd.
0 cites