Patents/Inventors

James Albert Kirchgessner

Tempe, AZUS8 patents

8 Patents

US125385072026
Semiconductor Device Having an Extrinsic Base Region with a Monocrystalline Region and Method Therefor
NXP B.V.
0 cites
US125016342025
Method for Forming a Transistor with a Conductivity Doped Base Structure
NXP USA, Inc.
0 cites
US124577842025
Semiconductor Device with Lateral Base Link Region
NXP B.V.
0 cites
US121320932024
Base Silicide on Monocrystalline Base Structures
NXP USA, Inc.
0 cites
US118551732023
Transistor with Monocrystalline Base Structures
NXP USA, Inc.
0 cites
US118174862023
Semiconductor Device and Method of Making a Semiconductor Device
NXP USA, Inc.
0 cites
US116409752023
Silicided Collector Structure
NXP USA, Inc.
0 cites
US115693572023
Semiconductor Device and Method of Making a Semiconductor Device
NXP USA, Inc.
0 cites