6 Patents
- US124842682025Mos-based Power Semiconductor Device Having Increased Current Carrying Area and Method of Fabricating Same
Purdue Research Foundation
0 cites - US124462702025Junction Field-effect Transistors Implemented in a Wide Bandgap Semiconductor Material
Globalfoundries U.S. Inc.
0 cites - US122848232025Buried Field Shield in III-V Compound Semiconductor Trench Mosfets via Etch and Regrowth
National Technology & Engineering Solutions Of Sandia, LLC
0 cites - US119731142024Mos-based Power Semiconductor Device Having Increased Current Carrying Area and Method of Fabricating Same
Purdue Research Foundation
0 cites - 0 cites
- 0 cites