Patents/Inventors

Jagar Singh

Clifton Park, NYUS22 patents

23 Patents

US125936832026
Structure with Inductor Embedded in Bonded Semiconductor Substrates and Methods
Globalfoundries U.S. Inc.
0 cites
US123362432025
Lateral Bipolar Transistor with Gated Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123242172025
Laterally Diffused Metal-oxide Semiconductor with Gate Contact
GLOBALFOUNDRIES U.S. Inc.
0 cites
US122951612025
Trench Isolation Having Three Portions with Different Materials, and LDMOS FET Including Same
Globalfoundries U.S. Inc.
0 cites
US121599262024
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US120742112024
Lateral Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119676352024
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US119676372024
Fin-based Lateral Bipolar Junction Transistor with Reduced Base Resistance and Method
Globalfoundries U.S. Inc.
0 cites
US119359232024
Lateral Bipolar Transistor with Gated Collector
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118483742023
Bipolar Junction Transistors Including a Portion of a Base Layer Inside a Cavity in a Dielectric Layer
Globalfoundries U.S. Inc.
0 cites
US118430342023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118374602023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118376532023
Lateral Bipolar Junction Transistor Including a Stress Layer and Method
Globalfoundries U.S. Inc.
0 cites
US118109692023
Lateral Bipolar Transistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118045422023
Annular Bipolar Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US117842242023
Lateral Bipolar Transistor Structure with Base Over Semiconductor Buffer and Related Method
Globalfoundries U.S. Inc.
0 cites
US117698062023
Bipolar Junction Transistors Including Wrap-around Emitter and Collector Contacts
Globalfoundries U.S. Inc.
0 cites
US117217222023
Bipolar Junction Transistors Including a Stress Liner
Globalfoundries U.S. Inc.
0 cites
US117107712023
Non-self-aligned Lateral Bipolar Junction Transistors
Globalfoundries U.S. Inc.
0 cites
US116521422023
Lateral Bipolar Junction Transistors Having an Emitter Extension and a Halo Region
Globalfoundries U.S. Inc.
0 cites
US115880442023
Bipolar Junction Transistor (BJT) Structure and Related Method
Globalfoundries U.S. Inc.
0 cites
US115880562023
Structure with Polycrystalline Active Region Fill Shape(s), and Related Method
GLOBALFOUNDRIES U.S. Inc.
0 cites
US115750292023
Lateral Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites