23 Patents
- US125818682026Half Metallic Heusler Multilayers with Perpendicular Magnetic Anisotropy
Samsung Electronics Co., Ltd.
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- US124843032025Display Panel Including Substrate Including Resin Layer Having Upper Surface Modified by a Plasma Treatment
Samsung Display Co., Ltd.
0 cites - US124579062025Spin-orbit Torque Magnetic Random-access Memory (SOT-MRAM) Device
Samsung Electronics Co., Ltd.
0 cites - US123743832025Memory Device Adjusting Skew of Multi-phase Clock Signals, Memory Controller Controlling the Memory Device, and Operating Method of the Memory Device
Samsung Electronics Co., Ltd.
0 cites - US123175082025Tuning Perpendicular Magnetic Anisotropy of Heusler Compound in MRAM Devices
SAMSUNG ELECTRONICS CO., Ltd
0 cites - US122741792025Seed Layer for Enhancing Tunnel Magnetoresistance with Perpendicularly Magnetized Heusler Films
International Business Machines Corporation
0 cites - US122056682025Semiconductor Device with Adjustment of Phase of Data Signal and Clock Signals, and Memory System Including the Same
Samsung Electronics Co., Ltd.
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- US120945082024Magnetic Tunneling Junction Switching with Parallel Spin-momentum Locked Spin Current
Samsung Electronics Co., Ltd.
0 cites - US119486212024Memory Devices, Memory Systems Having the Same, and Operating Methods Thereof
Samsung Electronics Co., Ltd.
0 cites - US119251242024Insertion Layers for Perpendicularly Magnetized Heusler Layers with Reduced Magnetic Damping
Samsung Electronics Co., Ltd.
0 cites - US118043212023Tunable Templating Layers for Perpendicularly Magnetized Heusler Films
Samsung Electronics Co., Ltd.
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- US117565782023Ferrimagnetic Heusler Compounds with High Spin Polarization
Samsung Electronics Co., Ltd.
0 cites - US117514862023Templating Layers for Perpendicularly Magnetized Heusler Films/compounds
Samsung Electronics Co., Ltd.
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- US116721642023Display Apparatus with Doped Barrier and Conductive Layers and Method of Manufacturing the Same
SAMSUNG DISPLAY CO., Ltd.
0 cites - US116642242023Method for Manufacturing Display Panel by Providing Laser Light to Doped Preliminary Active Layer to Form Active Layer
Samsung Display Co., Ltd.
0 cites - US116659792023Magnetic Junctions Having Enhanced Tunnel Magnetoresistance and Utilizing Heusler Compounds
Samsung Electronics Co., Ltd.
0 cites - US115577212023Heusler Compounds with Non-magnetic Spacer Layer for Formation of Synthetic Anti-ferromagnets (SAF)
Samsung Electronics Co., Ltd.
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