3 Patents
- US121019232024Semiconductor Device Including Gate Structure Having First Portion and Second Portion and Method for Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117641452023Wiring Structure Having Double Capping Structure, Manufacturing Method Thereof, and Integrated Circuit Chip Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117007222023Method for Manufacturing a Semiconductor Device Using a Support Layer to Form a Gate Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites