6 Patents
- US126108072026Integrated Circuit Devices Including a Back Side Power Distribution Network Structure and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US125936742026Semiconductor Transistor Device Including Backside Contact Structure Vertically Between Backside Power Rail and Source/drain Structure and Method of Forming Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US1257514720263d-stacked Transistor Structure with Barrier Layer Between Upper Gate Structure and Lower Gate Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US1255037520263d-stacked Semiconductor Device Including Gate Structure with RMG Inner Spacer Protecting Lower Work-function Metal Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123962532025Integrated Circuit Devices Including Stacked Field Effect Transistors and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US123640182025Limited Lateral Growth of S/D Epi by Outer Dielectric Layer in 3-dimensional Stacked Device
Samsung Electronics Co., Ltd.
0 cites