16 Patents
- US125734552026Nonvolatile Memory Device and Method of Controlling Using Time Division Enable Switches
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125121702025Method of Determining and Preprogramming Over-erases Groups of Memory Cells
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124942572025Memory Device Including String Select Transistors Having Different Threshold Voltages and Method of Operating the Memory Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US122242772025Memory Devices Having Cell Over Periphery Structure, Memory Packages Including the Same, and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US121476662024Non-volatile Memory Device Including Multi-stack Memory Block and Operating Method Thereof
Samsung Electronics Co., Ltd.
0 cites - US121190462024Nonvolatile Memory Device Having Multi-stack Memory Block and Method of Operating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120573912024Semiconductor Device and Massive Data Storage System Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US118812722024Nonvolatile Memory Device and Method of Programming in a Nonvolatile Memory
Samsung Electronics Co., Ltd.
0 cites - US118546232023Memory Controller, Memory Device and Memory System Having Improved Threshold Voltage Distribution Characteristics and Related Operating Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US117974052023Nonvolatile Memory Device Having Cell-over-periphery (COP) Structure with Address Re-mapping
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116158552023Nonvolatile Memory Device and Method of Programming in a Nonvolatile Memory
Samsung Electronics Co., Ltd.
0 cites - US115812972023Memory Devices Having Cell Over Periphery Structure, Memory Packages Including the Same, and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites