9 Patents
- US126045372026High Mobility Transistor Element Resulting from IGTO Oxide Semiconductor Crystallization, and Production Method for Same
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY)
0 cites - US125817092026Tellurium Oxide, and Thin Film Transistor Comprising Same as Channel Layer
Samsung Electronics Co., Ltd.
0 cites - US125637882026Thin Film Transistor Comprising Crystalline IZTO Oxide Semiconductor, and Method for Producing Same
IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION UNIVERSITY)
0 cites - US124083822025Semiconductor Memory Device Having a Confinement Layer with a Two-dimensional Electron Gas in the Confinement Layer
IUCF-HYU (Industry-university Cooperation Foundation Hanyang University)
0 cites - US122119402025Thin Film Transistor and Vertical Non-volatile Memory Device Including Transition Metal-induced Polycrystalline Metal Oxide Channel Layer
Samsung Electronics Co., Ltd.
0 cites - US119801092024Selection Element-integrated Phase-change Memory and Method for Producing Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118827052024Three-dimensional Semiconductor Memory Device, Operating Method of the Same and Electronic System Including the Same
Samsung Electronics Co., Ltd.
0 cites - US115880572023Thin Film Transistor and Vertical Non-volatile Memory Device Including Metal Oxide Channel Layer Having Bixbyite Crystal
Industry-university Cooperation Foundation Hanyang University
0 cites