Inwon Park

2 Patents

• US121837322024

  Semiconductor Devices Including an Isolation Insulating Pattern on a Boundary Region of a Substrate and Between First Active Patterns and Second Active Patterns

  Samsung Electronics Co., Ltd.

  0 cites
• US117054512023

  Semiconductor Devices Including an Isolation Insulating Pattern with a First Bottom Surface, a Second Bottom Surface, and a Third Bottom Surface Therebetween, Where the Third Bottom Surface Has a Different Height Than the First and Second Bottom Surfaces

  Samsung Electronics Co., Ltd.

  0 cites