Patents/Inventors

Innocenzo Tortorelli

Cernusco Sul NaviglioIT48 patents

45 Patents

US125974502026
Pulse Based Multi-level Cell Programming
Micron Technology, Inc.
0 cites
US125141382025
Dopant-modulated Etching for Memory Devices
Micron Technology, Inc.
0 cites
US124888352025
Wordline Boost by Charge Sharing in a Memory Device
Micron Technology, Inc.
0 cites
US124628702025
Reading a Multi-level Memory Cell
Micron Technology, Inc.
0 cites
US123743932025
Varying-polarity Read Operations for Polarity-written Memory Cells
Micron Technology, Inc.
0 cites
US123679332025
Unipolar Programming of Memory Cells
Micron Technology, Inc.
0 cites
US123619882025
Adaptive Write Operations for a Memory Device
Micron Technology, Inc.
0 cites
US123361932025
Devices Including a Passive Material Between Memory Cells and Conductive Access Lines, and Related Electronic Devices
Micron Technology, Inc.
0 cites
US123224472025
Apparatus with Multi-bit Cell Read Mechanism and Methods for Operating the Same
Micron Technology, Inc.
0 cites
US122937892025
Programming Techniques for Polarity-based Memory Cells
Micron Technology, Inc.
0 cites
US122951472025
Asymmetric Memory Cell Design
Micron Technology, Inc.
0 cites
US122833162025
Cross-point Pillar Architecture for Memory Arrays
Micron Technology, Inc.
0 cites
US122779672025
Memory Device and Method for Operating the Same Including Setting a Recovery Voltage
Micron Technology, Inc.
0 cites
US122198832025
Techniques for Forming Self-aligned Memory Structures
Micron Technology, Inc.
0 cites
US121760422024
Operating a Chalcogenide Memory with Vertical Word and Vertical Word Switching Elements
Micron Technology, Inc.
0 cites
US121255402024
Write Latency and Energy Using Asymmetric Cell Design
Micron Technology, Inc.
0 cites
US120803652024
Analog Storage Using Memory Device
Micron Technology, Inc.
0 cites
US120757142024
Random Number Generation Based on Threshold Voltage Randomness
Micron Technology, Inc.
0 cites
US120336952024
Techniques for Multi-level Chalcogenide Memory Cell Programming
Micron Technology, Inc.
0 cites
US120147792024
Programming Techniques for Polarity-based Memory Cells
Micron Technology, Inc.
0 cites
US119961412024
Reading a Multi-level Memory Cell
Micron Technology, Inc.
0 cites
US119841912024
Pulse Based Multi-level Cell Programming
Micron Technology, Inc.
0 cites
US119421832024
Adaptive Write Operations for a Memory Device
Micron Technology, Inc.
0 cites
US119220562024
Neural Network Memory
Micron Technology, Inc.
0 cites
US119230022024
Varying-polarity Read Operations for Polarity-written Memory Cells
Micron Technology, Inc.
0 cites
US119157502024
Memory Device and Method for Operating the Same
Micron Technology, Inc.
0 cites
US118876612024
Cross-point Pillar Architecture for Memory Arrays
Micron Technology, Inc.
0 cites
US118695852024
Segregation-based Memory
Micron Technology, Inc.
0 cites
US118372672023
Implementations to Store Fuse Data in Memory Devices
Micron Technology, Inc.
0 cites
US118171482023
Techniques for Programming a Memory Cell
Micron Technology, Inc.
0 cites
US117986202023
Apparatuses Including Multi-level Memory Cells and Methods of Operation of Same
Micron Technology, Inc.
0 cites
US118008162023
Dopant-modulated Etching for Memory Devices
Micron Technology, Inc.
0 cites
US117838972023
Memory Cells for Storing Operational Data
Micron Technology, Inc.
0 cites
US117695512023
Multi-level Self-selecting Memory Device
Micron Technology, Inc.
0 cites
US117638862023
Techniques to Access a Self-selecting Memory Device
Micron Technology, Inc.
0 cites
US117659122023
Three Dimensional Memory Arrays
Micron Technology, Inc.
0 cites
US117352612023
Programming Enhancement in Self-selecting Memory
Micron Technology, Inc.
0 cites
US117352762023
Programming Techniques for Polarity-based Memory Cells
Micron Technology, Inc.
0 cites
US117299992023
Capacitive Pillar Architecture for a Memory Array
Micron Technology, Inc.
0 cites
US117051992023
Programming Memory Cells Using Asymmetric Current Pulses
Micron Technology, Inc.
0 cites
US116371452023
Multi-component Cell Architectures for a Memory Device
Micron Technology, Inc.
0 cites
US116158442023
Apparatuses and Methods Including Memory and Operation of Same
MICRON TECHNOLOGY, Inc.
0 cites
US116006652023
Cross-point Memory and Methods for Fabrication of Same
Micron Technology, Inc.
0 cites
US115876122023
Neural Network Memory with an Array of Variable Resistance Memory Cells
Micron Technology, Inc.
0 cites
US115879792023
Three Dimensional Memory Array
Micron Technology, Inc.
0 cites