25 Patents
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- US125507142026Late Middle-of-line Gate Cut with Power Bar Formation
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US124842962025Fork Sheet Device with Wrapped Source and Drain Contact to Prevent NFET to PFET Contact Shortage in a Tight Space
International Business Machines Corporation
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- US124263202025Vertically Stacked Fin Semiconductor Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US123746152025Electronic Devices with a Low Dielectric Constant
International Business Machines Corporation
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- US122680262025High Aspect Ratio Contact Structure with Multiple Metal Stacks
International Business Machines Corporation
0 cites - US121071322024Source/drain Contact Positioning Under Power Rail
International Business Machines Corporation
0 cites - US120211352024Bottom Source/drain Etch with Fin-cut-last-vtfet
International Business Machines Corporation
0 cites - US120028562024Vertical Field Effect Transistor with Crosslink Fin Arrangement
International Business Machines Corporation
0 cites - US119903422024Metal Cut Patterning and Etching to Minimize Interlayer Dielectric Layer Loss
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US119161432024Vertical Transport Field-effect Transistor with Gate Patterning
International Business Machines Corporation
0 cites - US118551912023Vertical FET with Contact to Gate Above Active Fin
International Business Machines Corporation
0 cites - US118108282023Transistor Boundary Protection Using Reversible Crosslinking Reflow
International Business Machines Corporation
0 cites - US117569612023Staggered Stacked Vertical Crystalline Semiconducting Channels
International Business Machines Corporation
0 cites - US117424262023Forming Crossbar and Non-crossbar Transistors on the Same Substrate
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites - US117107682023Hybrid Diffusion Break with EUV Gate Patterning
International Business Machines Corporation
0 cites - US116950592023Bottom Source/drain Etch with Fin-cut-last-vtfet
International Business Machines Corporation
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- US116213262023Vertical Field Effect Transistor with Crosslink Fin Arrangement
International Business Machines Corporation
0 cites - US115691322023Transistor Structure with N/P Boundary Buffer
International Business Machines Corporation
0 cites - US115560572023Surface Treatment of Titanium Containing Hardmasks
International Business Machines Corporation
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