20 Patents
- US125884892026Integrated Circuit Devices Including Stacked Elements and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US124631362025Integrated Circuit Devices Including Backside Power Rail and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US124648182025Three-dimensional Semiconductor Device Having Vertical Misalignment
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123640182025Limited Lateral Growth of S/D Epi by Outer Dielectric Layer in 3-dimensional Stacked Device
Samsung Electronics Co., Ltd.
0 cites - US123566652025Stacked Transistors Having an Isolation Region Therebetween and a Common Gate Electrode, and Related Fabrication Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123175822025Integrated Circuit Devices Including a Metal Resistor and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122496032025Resistor Structures of Integrated Circuit Devices Including Stacked Transistors and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122009202025Integrated Circuit Devices Including a Power Distribution Network and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US121441632024Selective Double Diffusion Break Structures for Multi-stack Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US121319962024Stacked Device with Backside Power Distribution Network and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US120878152024Crossing Multi-stack Nanosheet Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120574482024Stacked Semiconductor Device Having Mirror-symmetric Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120403272024Three-dimensional Semiconductor Device Having Vertical Misalignment
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119688182024SRAM Memory Cell for Stacked Transistors with Different Channel Width
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119359222024Semiconductor Device Having Stepped Multi-stack Transistor Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117423452023Method of Forming an Array of Multi-stack Nanosheet Structures Having a Dam Structure Isolating Multi-stack Transistors
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117355852023Stacked Semiconductor Device Having Mirror-symmetric Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US116706772023Crossing Multi-stack Nanosheet Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites