4 Patents
- US123313962025Systems and Methods for Homogenous Intermixing of Precursors in Alloy Atomic Layer Deposition
LAM RESEARCH CORPORATION
0 cites - US123052782025Method of Reducing Titanium Nitride Etching During Tungsten Film Formation
Applied Materials, Inc.
0 cites - US120625452024Fluorine-free Tungsten ALD for Dielectric Selectivity Improvement
Applied Materials, Inc.
0 cites - US118279762023Systems and Methods for Homogenous Intermixing of Precursors in Alloy Atomic Layer Deposition
LAM RESEARCH CORPORATION
0 cites