7 Patents
- US125576112026Semiconductor on Insulator Structure Comprising a Buried High Resistivity Layer
Globalwafers Co., Ltd.
0 cites - US123005352025High Resistivity Silicon-on-insulator Substrate Comprising an Isolation Region
Globalwafers Co., Ltd.
0 cites - US116996152023High Resistivity Semiconductor-on-insulator Wafer and a Method of Manufacture
Globalwafers Co., Ltd.
0 cites - US116555592023High Resistivity Single Crystal Silicon Ingot and Wafer Having Improved Mechanical Strength
Globalwafers Co., Ltd.
0 cites - US116555602023High Resistivity Single Crystal Silicon Ingot and Wafer Having Improved Mechanical Strength
Globalwafers Co., Ltd.
0 cites - US115944462023High Resistivity SOI Wafers and a Method of Manufacturing Thereof
Globalwafers Co., Ltd.
0 cites - US115878252023Method of Preparing an Isolation Region in a High Resistivity Silicon-on-insulator Substrate
Globalwafers Co., Ltd.
0 cites