27 Patents
- US125504072026Semiconductor Devices with Backside via and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US125074592025Semiconductor Device Contact Structures and Methods of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124647742025Semiconductor Structure and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124648062025Semiconductor Transistor Device Having Backside Source/drain Contact with a Low-k Spacer and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US123343882025Isolation Structure and a Self-aligned Capping Layer Formed Thereon
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123242022025Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122836302025Epitaxial Source/drain Structures for Multigate Devices and Methods of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122667032025Dielectric Structures for Semiconductor Device Structures
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122243242025Method of Forming Backside Power Rails
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121258792024Epitaxial Source/drain Structure and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US121193782024Methods of Forming Epitaxial Source/drain Features in Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120807692024Contact Structure with Silicide and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120683782024Semiconductor Devices with Backside via and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US119688172024Source/drain Contact Having a Protruding Segment
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118761352024Epitaxial Source/drain Structures for Multigate Devices and Methods of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118551612023Semiconductor Device Contact Structures and Methods of Fabricating Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118430282023Isolation Features and Methods of Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117913872023Semiconductor Devices with Backside via and Methods Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117842222023Epitaxial Source/drain Structure and Method
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US117770042023Fin Field Effect Transistor (finfet) Device Structure and Method for Forming the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US117283942023Method of Forming Backside Power Rails
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
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