16 Patents
- US125882832026Semiconductor Structure and Related Methods
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124329632025Device Having an Air Gap Adjacent to a Contact Plug and Covered by a Doped Dielectric Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124023792025Epitaxial Layer Under a Gate Structure of a Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123826922025Dielectric Inner Spacers in Multi-gate Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites - US123827032025Spacer Features for Nanosheet-based Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123639502025Nano-fet Semiconductor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123083712025Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACURING COMPANY, Ltd.
0 cites - US122372322025Methods for Forming Source/drain Features
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119731222024Nano-fet Semiconductor Device and Method of Forming
Taiwan Semiconductor Manufacturing Co., Ltd.
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- US119014552024Method of Manufacturing a Finfet by Implanting a Dielectric with a Dopant
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117914102023Semiconductor Device and Manufacturing Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
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- US116265052023Dielectric Inner Spacers in Multi-gate Field-effect Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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