Patents/Inventors

I-cheng Tung

Hillsboro, ORUS18 patents

17 Patents

US126160212026
Metal Insulator Metal (MIM) Capacitor Architectures
Intel Corpoation
0 cites
US126105842026
Selective Growth of High-k Oxide on Channel of Gate-all-around Transistors
Intel Corporation
0 cites
US125686442026
Contact Over Active Gate Structures with Trench Contact Layers for Advanced Integrated Circuit Structure Fabrication
Intel Corporation
0 cites
US124955592025
Capacitor with Dual Dielectric Layers
Intel Corporation
0 cites
US124379292025
Capacitor with an Electrically Conductive Layer Coupled with a Metal Layer of the Capacitor
Intel Corporation
0 cites
US123289272025
Low Resistance and Reduced Reactivity Approaches for Fabricating Contacts and the Resulting Structures
Intel Coporation
0 cites
US122552252025
Low Leakage Thin Film Capacitors Using Titanium Oxide Dielectric with Conducting Noble Metal Oxide Electrodes
Intel Corporation
0 cites
US122243092025
Capacitors with Built-in Electric Fields
Intel Corporation
0 cites
US121837392024
Ribbon or Wire Transistor Stack with Selective Dipole Threshold Voltage Shifter
Intel Corporation
0 cites
US121703192024
Dual Contact Process with Stacked Metal Layers
Intel Corporation
0 cites
US121609982024
Magnetic Tunnel Junction Structures and Related Methods
National Taiwan University
0 cites
US121007312024
Crystalline Bottom Electrode for Perovskite Capacitors and Methods of Fabrication
Intel Corporation
0 cites
US120481652024
Ferroelectric Capacitors and Methods of Fabrication
Intel Corporation
0 cites
US119800372024
Memory Cells with Ferroelectric Capacitors Separate from Transistor Gate Stacks
Intel Corporation
0 cites
US117770292023
Vertical Transistors for Ultra-dense Logic and Memory Applications
Intel Corporation
0 cites
US117424072023
Multilayer High-k Gate Dielectric for a High Performance Logic Transistor
Intel Corporation
0 cites
US116056702023
Magnetic Tunnel Junction Structures and Related Methods
National Taiwan University
0 cites