Hyunsoo Yang

3 Patents

• US125486122026

  Semiconductor Memory Device with Spin-orbit Coupling Channel

  National University Of Singapore

  0 cites
• US120757082024

  Spin Torque Device Having a Spin Current Polarized at a Canting Angle of Out-of-plane Spin

  National University Of Singapore

  0 cites
• US120147622024

  Semiconductor Memory Device with Spin-orbit Coupling Channel

  National University Of Singapore

  0 cites