13 Patents
- US125060742025Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US124777482025Variable Resistance Memory Device and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124577542025Nonvolatile Memory Device and Operating Method of the Same
Samsung Electronics Co., Ltd.
0 cites - US124215982025Nanocrystalline Graphene and Method of Forming Nanocrystalline Graphene
Samsung Electronics Co., Ltd.
0 cites - US124262642025Semiconductor Devices and Data Storage Systems Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123599112025Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
Samsung Electronics Co., Ltd.
0 cites - US122680092025Memory Device Including Vertical Stack Structure, Method of Fabricating the Same, and Electronic Device Including Memory Device
Samsung Electronics Co., Ltd.
0 cites - US119062912024Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117641562023Layer Structure Including Diffusion Barrier Layer and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US116826222023Interconnect Structure Having Nanocrystalline Graphene Cap Layer and Electronic Device Including the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116262822023Graphene Structure and Method of Forming Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - US116265022023Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites