Hyun-jin Shin

3 Patents

• US124942632025

  Flash Memory for Performing Margin Read Test Operation and Margin Read Test System Including the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US119841562024

  Nonvolatile Memory Devices Having Pumping Circuits Operable in Multiple Modes

  Samsng Electronics Co., Ltd.

  0 cites
• US117220482023

  Voltage Generating Circuits Including Assist Circuits and Operating Methods Thereof

  Samsung Electronics Co., Ltd.

  0 cites