6 Patents
- US124530822025Semiconductor Device Having a Cell Separation Pattern in Contact with the Bit Line Contact
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124262432025Semiconductor Memory Device and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US121675872024Semiconductor Memory Device and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US116658832023Semiconductor Memory Device Having Spacer Capping Pattern Disposed Between Burried Dielectic Pattern and an Air Gap and Method of Fabricating Same
Samsung Electronics Co., Ltd.
0 cites - US116005702023Semiconductor Memory Device and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites