76 Patents
- US125060742025Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US124736622025Nanocrystalline Boron Nitride Film, Image Sensor Including the Same, Field Effect Transistor Including the Same, and Method of Fabricating the Nanocrystalline Boron Nitride Film
UNIST(ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US124669952025Soluble Graphene Quantum Dots and Light-emitting Device Using the Same
Samsung Electronics Co., Ltd.
0 cites - US124215982025Nanocrystalline Graphene and Method of Forming Nanocrystalline Graphene
Samsung Electronics Co., Ltd.
0 cites - US124083992025Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US124009752025Interconnect Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US124023742025Electronic Device Including Two-dimensional Material and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123781202025Wiring Including Graphene Layer and Method of Manufacturing the Same
Seoul National University R&DB Foundation
0 cites - US123599112025Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
Samsung Electronics Co., Ltd.
0 cites - US123566682025Field Effect Transistor Including Channels Having a Hollow Closed Cross-sectional Structure and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US123410632025Interconnect Structure, Electronic Device Including the Same, and Method of Manufacturing Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US123343572025Method of Forming Material Layer
Research & Business Foundation Sungkyunkwan University
0 cites - US123362592025Electronic Device Including Two-dimensional Material and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US122975322025Metal Chalcogenide Film and Method and Device for Manufacturing the Same
Research & Business Foundation Sungyunkwan University
0 cites - US122724022025Vertical Nonvolatile Memory Device Including Memory Cell String
Samsung Electronics Co., Ltd.
0 cites - US122681062025Nonvolatile Memory Device and Operating Method of the Same
President And Fellows Of Harvard College
0 cites - US122552442025Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - US122179582025Method of Pre-treating Substrate and Method of Directly Forming Graphene Using the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122119042025Black Phosphorus-two Dimensional Material Complex and Method of Manufacturing the Same
UNIST (ULSAN National Institute Of Science And Technology)
0 cites - US121991292025Image Sensors Integrated with Infrared Sensors and Electronic Devices Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121805842024Method of Fabricating Hexagonal Boron Nitride
UNIST (Ulsan National Institute Of Science And Technology)
0 cites - US121836792024Interconnect Structure and Electronic Apparatus Including the Same
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US121837802024Metal-to-semiconductor Contact Including a 2D Crystal Material Layer
Samsung Electronics Co., Ltd.
0 cites - US121478882024Neural Computer Including Image Sensor Capable of Controlling Photocurrent
President And Fellows Of Harvard College
0 cites - US121398142024Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US121426972024Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
Samsung Electronics Co., Ltd.
0 cites - US121319052024Graphene Structure and Method of Forming the Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - US121321332024Avalanche Photodetectors and Image Sensors Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121227322024Functionalized Polycyclic Aromatic Hydrocarbon Compound and Light-emitting Device Including the Same
Research & Business Foundation Sungkyunkwan University
0 cites - 0 cites
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- US120806492024Semiconductor Memory Device and Apparatus Including the Same
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites - US120613122024Amorphous Boron Nitride Film and Anti-reflection Coating Structure Including the Same
Samsung Electronics Co., Ltd.
0 cites - US120626972024Semiconductor Device Including Two-dimensional Semiconductor Material
Samsung Electronics Co., Ltd.
0 cites - US120466562024Semiconductor Device Including Surface-treated Semiconductor Layer
Samsung Electronics Co., Ltd.
0 cites - US120403602024Semiconductor Device Including Metal-2 Dimensional Material-semiconductor Contact
Samsung Electronics Co., Ltd.
0 cites - US120340492024Superlattice Structure Including Two-dimensional Material and Device Including the Superlattice Structure
Center For Technology Licensing At Cornell University
0 cites - US120275882024Field Effect Transistor Including Channel Formed of 2D Material
Samsung Electronics Co., Ltd.
0 cites - US120275892024Semiconductor Device Including Graphene and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US120149912024Interconnect Structure Including Graphene-metal Barrier and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US120028822024Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US119759712024Methods of Forming Graphene and Graphene Manufacturing Apparatuses
Samsung Electronics Co., Ltd.
0 cites - US119787042024Wiring Structure and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US119618982024Method of Patterning Two-dimensional Material Layer on Substrate, and Method of Fabricating Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US119357902024Field Effect Transistor and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US119062912024Method of Calculating Thickness of Graphene Layer and Method of Measuring Content of Silicon Carbide by Using XPS
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US118944692024Resonant Tunneling Devices Including Two-dimensional Semiconductor Materials and Methods of Detecting Physical Properties Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118878492024Method of Forming Transition Metal Dichalcogenidethin Film and Method of Manufacturing Electronic Device Including the Same
Research & Business Foundation, Sungkyunkwan University
0 cites - US118878502024Method of Forming Carbon Layer and Method of Forming Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US118813992024Method of Forming Transition Metal Dichalcogenide Thin Film
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites - US118697682024Method of Forming Transition Metal Dichalcogenide Thin Film
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118309522023Two-dimensional Material-based Wiring Conductive Layer Contact Structures, Electronic Devices Including the Same, and Methods of Manufacturing the Electronic Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US117641562023Layer Structure Including Diffusion Barrier Layer and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US117217812023Avalanche Photodetectors and Image Sensors Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US117086332023Metal Chalcogenide Film and Method and Device for Manufacturing the Same
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites - US117037532023Pellicles for Photomasks, Reticles Including the Photomasks, and Methods of Manufacturing the Pellicles
Samsung Electronics Co., Ltd.
0 cites - US116826222023Interconnect Structure Having Nanocrystalline Graphene Cap Layer and Electronic Device Including the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116241272023Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (Ulsan National Institute Of Science And Technology)
0 cites - US116262822023Graphene Structure and Method of Forming Graphene Structure
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US116264892023Optical Sensor and Image Sensor Including Graphene Quantum Dots
Samsung Electronics Co., Ltd.
0 cites - US116265022023Interconnect Structure to Reduce Contact Resistance, Electronic Device Including the Same, and Method of Manufacturing the Interconnect Structure
Samsung Electronics Co., Ltd.
0 cites - US116007742023Nonvolatile Memory Device and Operating Method of the Same
President And Fellows Of Harvard College
0 cites - US115880342023Field Effect Transistor Including Gate Insulating Layer Formed of Two-dimensional Material
SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
0 cites - 0 cites
- US115750112023Superlattice Structure Including Two-dimensional Material and Device Including the Superlattice Structure
Center For Technology Licensing At Cornell University
0 cites - US115631162023Vertical Type Transistor, Inverter Including the Same, and Vertical Type Semiconductor Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US115453582023Method of Forming Transition Metal Dichalcogenide Thin Film
Research & Business Foundation Sungkyunkwan University
0 cites