2 Patents
- US124285952025Optoelectronic Synaptic Device Including Quantum Dot(qd)-transition Metal Chalcogenide(tmd) Heterojunction
INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY
0 cites - US123242532025Light-gated Transistor Including Large-area Transition Metal Dichalcogenide as Light Sensing Layer and Method of Manufacturing the Same
INDUSTRY-ACADEMIC COOPERATION FOUNDATION GYEONGSANG NATIONAL UNIVERSITY
0 cites