4 Patents
- US124083822025Semiconductor Memory Device Having a Confinement Layer with a Two-dimensional Electron Gas in the Confinement Layer
IUCF-HYU (Industry-university Cooperation Foundation Hanyang University)
0 cites - US122119402025Thin Film Transistor and Vertical Non-volatile Memory Device Including Transition Metal-induced Polycrystalline Metal Oxide Channel Layer
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US115880572023Thin Film Transistor and Vertical Non-volatile Memory Device Including Metal Oxide Channel Layer Having Bixbyite Crystal
Industry-university Cooperation Foundation Hanyang University
0 cites