Hwichan Jun

8 Patents

• US120878152024

  Crossing Multi-stack Nanosheet Structure and Method of Manufacturing the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US120574482024

  Stacked Semiconductor Device Having Mirror-symmetric Pattern

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US119688182024

  SRAM Memory Cell for Stacked Transistors with Different Channel Width

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US119359222024

  Semiconductor Device Having Stepped Multi-stack Transistor Structure

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US117423452023

  Method of Forming an Array of Multi-stack Nanosheet Structures Having a Dam Structure Isolating Multi-stack Transistors

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US117355852023

  Stacked Semiconductor Device Having Mirror-symmetric Pattern

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US116706772023

  Crossing Multi-stack Nanosheet Structure and Method of Manufacturing the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites
• US115692322023

  Semiconductor Device Including Self-aligned Gate Structure and Method of Manufacturing the Same

  SAMSUNG ELECTRONICS CO., Ltd.

  0 cites