Hung Wei Li

8 Patents

• US123025532025

  Vertical DRAM Structure and Method

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US122552362025

  Self-aligned Active Regions and Passivation Layer and Methods of Making the Same

  Taiwan Semiconductor Manufacturing Company Limited

  0 cites
• US121764332024

  Polarization Enhancement Structure for Enlarging Memory Window

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US121259202024

  Dual-layer Channel Transistor and Methods of Forming Same

  Taiwan Semiconductor Manufacturing Company Limited

  0 cites
• US119234592024

  Transistor Including Hydrogen Diffusion Barrier Film and Methods of Forming Same

  Taiwan Semiconductor Manufacturing Company Limited

  0 cites
• US118174852023

  Self-aligned Active Regions and Passivation Layer and Methods of Making the Same

  Taiwan Semiconductor Manufacturing Company Limited

  0 cites
• US117055162023

  Polarization Enhancement Structure for Enlarging Memory Window

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US116463792023

  Dual-layer Channel Transistor and Methods of Forming Same

  Taiwan Semiconductor Manufacturing Company Limited

  0 cites