15 Patents
- US123007332025Semiconductor Device with a Work Function Layer Having an Oxygen-blocking Dopant Layer
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122782882025Fin Field-effect Transistor Device Having Hybrid Work Function Layer Stack
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122551042025Semiconductor Device and Method of Manufacture
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US121762512024Semiconductor Device with Profiled Work-function Metal Gate Electrode and Method of Making
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US121425302024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121425312024Pre-deposition Treatment for FET Technology and Devices Formed Thereby
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120876372024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120877672024Method of Tuning Threshold Voltages of Transistors
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120517532024Fin Field-effect Transistor Device Having Hybrid Work Function Layer Stack
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120402352024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120211452024Fin Field-effect Transistor Device Having Hybrid Work Function Layer Stack
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119161462024Gate Resistance Reduction Through Low-resistivity Conductive Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118044092023Semiconductor Device with Profiled Work-function Metal Gate Electrode and Method of Making
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - 0 cites