Hung-chang Yu

7 Patents

• US123763132025

  Circuit and Method to Enhance Efficiency of Memory

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

  0 cites
• US122436082025

  Method and Memory Device with Increased Read and Write Margin

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US121833792024

  Enhancing Tunnel Magnetoresistance in Memory Device Comprising a Memory Cell with a Memory Element Coupled Between a Switch and a Negative Resistance Device

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US121676132024

  Circuit and Method to Enhance Efficiency of Memory

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

  0 cites
• US119010302024

  Method and Memory Device with Increased Read and Write Margin

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US117930002023

  Circuit and Method to Enhance Efficiency of Memory

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.

  0 cites
• US115746582023

  Memory Device with Charge-recycling Arrangement

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites