Patents/Inventors

Huimei Zhou

Albany, NYUS25 patents

27 Patents

US126158322026
Self-aligned Backside Contact Structure for Semiconductor Device Power Delivery
International Business Machines Corporation
0 cites
US125989862026
Metal Insulator Metal Capacitor (MIM Capacitor)
International Business Machines Corporation
0 cites
US125718372026
Semiconductor Device with a Protective Diode Connected to a Fuse
International Business Machines Corporation
0 cites
US125504482026
Protection Diode to Prevent Charge Damage During MOL
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US125503712026
Separate Gate Complementary Field-effect Transistor
International Business Machines Corporation
0 cites
US124905112025
Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites
US124646962025
Static Random Access Memory Device with Stacked Fets
International Business Machines Corporation
0 cites
US124224652025
In-situ Chip Design for Pulse IV Self-heating Evaluation
International Business Machines Corporation
0 cites
US124143282025
Co-integrating Gate-all-around Nanosheet Transistors and Comb-nanosheet Transistors
International Business Machines Corporation
0 cites
US124143362025
Semiconductor Structure Having Stacked Power Rails
International Business Machines Corporation
0 cites
US124143122025
Back-end-of-line Thin Film Resistor
International Business Machines Corporation
0 cites
US124023912025
Stressed Material Within Gate Cut Region
International Business Machines Corporation
0 cites
US123566802025
Nanosheet Device with Air-gaped Source/drain Regions
International Business Machines Corporation
0 cites
US123006172025
Self-aligned Buried Power Rail Cap for Semiconductor Devices
International Business Machines Corporation
0 cites
US122373252025
Three-dimensional Field Effect Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US121193412024
Electrostatic Discharge Diode Having Dielectric Isolation Layer
International Business Machines Corporation
0 cites
US121071472024
Self-aligned Gate Contact for Vtfets
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US121070142024
Nanosheet Transistors with Self-aligned Gate Cut
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119553692024
Recessed Local Interconnect Formed Over Self-aligned Double Diffusion Break
International Business Machines Corporation
0 cites
US119088882024
Metal-insulator-metal Capacitor Structure Supporting Different Voltage Applications
International Business Machines Corporation
0 cites
US119087432024
Planar Devices with Consistent Base Dielectric
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118698122024
Stacked Complementary Field Effect Transistors
International Business Machines Corporation
0 cites
US118175022023
Three-dimensional Field Effect Device
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118044362023
Self-aligned Buried Power Rail Cap for Semiconductor Devices
International Business Machines Corporation
0 cites
US117890642023
Decoupling BTI and HCI Mechanism in Ring Oscillator
International Business Machines Corporation
0 cites
US116949582023
Layout Design for Threshold Voltage Tuning
International Business Machines Corporation
0 cites
US116768922023
Three-dimensional Metal-insulator-metal Capacitor Embedded in Seal Structure
International Business Machines Corporation
0 cites