Patents/Inventors

Huihui Zhu

Pohang-siKR1 patent

2 Patents

US124904592025
Thin Film Transistor Using Three-dimensional Tin-based Perovskite as a Semiconductor Layer and Preparation Method Thereof
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
0 cites
US122741082025
Thin Film Transistor Comprising a Low Lead Content Halide Anion Perovskite and Display Device Including the Thin Film Transistor
POSTECH RESEARCH AND BUSINESS DEVELOPMENT FOUNDATION
0 cites