Patents/Inventors

Hui Zang

San Jose, CAUS39 patents

35 Patents

US125752012026
Buried Channel Transistor Structures and Processes
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US125688022026
Single Diffusion Cut for Gate Structures
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125017282025
Global-shutter Pixel
Omnivision Technologies, Inc.
0 cites
US124778462025
Pixel with Vertical Transfer Structure for Dark Current Improvement, an Image Sensor Thereof and a Fabrication Method Thereof
Omnivision Technologies, Inc.
0 cites
US124713942025
Central Deep Trench Isolation Shift
Omnivision Technologies, Inc.
0 cites
US124648372025
High Dynamic Range, Backside-illuminated, Low Crosstalk Image Sensor with Walls on Backside Surface to Isolate Photodiodes
Omnivision Technologies, Inc.
0 cites
US124305602025
Distributed Synchronous Training Architecture Using Stale Weights
Huawei Technologies Co., Ltd.
0 cites
US124179442025
Formation of Trench Silicide Source or Drain Contacts Without Gate Damage
International Business Machines Corporation
0 cites
US124191252025
CMOS Devices with Asymmetrically Passivated Isolation Structure and Methods Thereof
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US122899272025
Image Sensor Diagonal Isolation Structures
Omni Vision Technologies, Inc.
0 cites
US122848392025
Dual Depth Junction Structures and Process Methods
Omnivision Technologies, Inc.
0 cites
US121549192024
Uniform Threshold Voltage Non-planar Transistors
Omnivision Technologies, Inc.
0 cites
US121071072024
Dark-current Inhibiting Image Sensor and Method
Omnivision Technologies, Inc.
0 cites
US120626702024
Pixel Layout with Photodiode Region Partially Surrounding Circuitry
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US120340272024
Semiconductor Device Contact Pad and Method of Contact Pad Fabrication
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US120028692024
Gate Contact Structures and Cross-coupled Contact Structures for Transistor Devices
Globalfoundries U.S. Inc.
0 cites
US119904962024
Vertical Transfer Structures
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US119787532024
Process to Release Silicon Stress in Forming CMOS Image Sensor
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US119489652024
Uneven-trench Pixel Cell and Fabrication Method
Omnivision Technologies, Inc.
0 cites
US119232482024
Single Diffusion Cut for Gate Structures
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118421782023
Compiler-level General Matrix Multiplication Configuration Optimization
Huawei Technologies Co., Ltd.
0 cites
US118430192023
Pixel, Associated Image Sensor, and Method
Omni Vision Technologies, Inc.
0 cites
US118108122023
Single Diffusion Cut for Gate Structures
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118109312023
Pixel-array Substrate
Omnivision Technologies, Inc.
0 cites
US118109402023
Pointed-trench Pixel-array Substrate and Associated Fabrication Method
Omnivision Technologies, Inc.
0 cites
US117842062023
Pixel-array Substrate and Associated Method
Omnivision Technologies, Inc.
0 cites
US117107522023
Flicker-mitigating Pixel-array Substrate
Omnivision Technologies, Inc.
0 cites
US116950292023
Pixel Formation Method
Omnivision Technologies, Inc.
0 cites
US116770112023
Fabrication Process of Vertical-channel, Silicon, Field-effect Transistors
Omnivision Technologies, Inc.
0 cites
US116706482023
Flicker-mitigating Pixel-array Substrate
Omnivision Technologies Inc.
0 cites
US116213362023
Pyramid-shaped Transistors
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US116109652023
Gate Cut Isolation Including Air Gap, Integrated Circuit Including Same and Related Method
GLOBALFOUNDRIES U.S. Inc.
0 cites
US115880332023
Uniform Threshold Voltage Non-planar Transistors
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US115749472023
Method and Image Sensor with Vertical Transfer Gate and Buried Backside-illuminated Photodiodes
Omnivision Technologies, Inc.
0 cites
US115693562023
Scaled Gate Contact and Source/drain Cap
GLOBALFOUNDRIES U.S. Inc.
0 cites