Hui-lin Huang

3 Patents

• US125573672026

  Source/drain Regions Formed Using Metal Containing Block Masks

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US125325182026

  Transistor Source/drain Regions and Methods of Forming the Same

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US122437832025

  Epitaxial Source/drain Recess Formation with Metal-comprising Masking Layers and Structures Resulting Therefrom

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites