Patents/Inventors

Hui-chi Chen

Hsinchu CountyTW25 patents

26 Patents

US125751722026
Metal Gate Electrode Formation of Memory Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US124777562025
Metal-insulator-metal Structure and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124647732025
Formation of a Semiconductor Device with a Gate Containing a Metal Oxide Layer Using an Oxidation Process
Taiwan Semiconductor Manufacturing Company, Ltd.
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US124647892025
Semiconductor Device Structure and Method for Forming the Semiconductor Device Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
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US124330112025
Post Gate Dielectric Processing for Semiconductor Device Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US124263092025
Method of Manufacturing Semiconductor Devices and Semiconductor Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US124143292025
Forming Low-resistance Capping Layer Over Metal Gate Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
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US124069522025
Chip Structure with Conductive Layer
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122182132025
Semiconductor Device Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122118452025
Semiconductor Device and a Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US121836972024
Semiconductor Device Having a Metal Pad and a Protective Layer for Corrosion Prevention Due to Exposure to Halogen
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121710912024
Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120949482024
Forming Low-resistance Capping Layer Over Metal Gate Electrode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120742062024
Integrated Circuit Device with Improved Reliability
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120574192024
Method for Forming Chip Structure with Conductive Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120574862024
Metal Gate Cap
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120417602024
Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US120226432024
Multi-layer High-k Gate Dielectric Structure
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US119357872024
Semiconductor Device and a Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119234052024
Metal-insulator-metal Structure and Methods of Fabrication Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd
0 cites
US118550222023
Shielding Structures
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
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US117354842023
Post Gate Dielectric Processing for Semiconductor Device Fabrication
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117283752023
Metal-insulator-metal (MIM) Capacitor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US116887592023
Metal-insulator-metal Capacitive Structure and Methods of Fabricating Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US116706082023
Prevention of Metal Pad Corrosion Due to Exposure to Halogen
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US116057202023
Metal Gate Cap
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites