Hugo Biard

6 Patents

• US126221892026

  Method for Manufacturing a Composite Structure Comprising a Thin Single-crystal Semiconductor Layer on a Carrier Substrate

  Soitec

  0 cites
• US126159982026

  Detachable Temporary Substrate Compatible with Very High Temperatures and Process for Transferring a Working Layer from the Substrate

  Soitec

  0 cites
• US123621732025

  Method for Manufacturing a Composite Structure Comprising a Thin Layer of Monocrystalline Sic on an Sic Carrier Substrate

  SOITEC

  0 cites
• US123200312025

  Method for Manufacturing a Composite Structure Comprising a Thin Layer Made of Monocrystalline Sic on a Carrier Substrate Made of Sic

  Soitec

  0 cites
• US121989832025

  Method for Producing a Composite Structure Comprising a Thin Layer of Monocrystalline Sic on a Carrier Substrate of Polycrystalline Sic

  Soitec

  0 cites
• US121597812024

  Method for Manufacturing a Composite Structure Comprising a Thin Layer Made of Monocrystalline Sic on a Carrier Substrate Made of Sic

  SOITEC

  0 cites