11 Patents
- US125753282026High Thermal Stability by Doping of Oxide Capping Layer for Spin Torque Transfer (STT) Magnetic Random Access Memory (MRAM) Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US124144762025Method for Forming a Perpendicular Spin Torque Oscillator (PSTO) Including Forming a Magneto Resistive Sensor (MR) Over a Spin Torque Oscillator (STO)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123568652025Multilayer Structure for Reducing Film Roughness in Magnetic Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121676992024Magnetic Layer for Magnetic Random Access Memory (MRAM) by Moment Enhancement
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121677012024Magnetic Tunnel Junction with Low Defect Rate After High Temperature Anneal for Magnetic Device Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119569712024Cooling for PMA (perpendicular Magnetic Anisotropy) Enhancement of STT-MRAM (spin-torque Transfer-magnetic Random Access Memory) Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US118496462023Nitride Capping Layer for Spin Torque Transfer (STT) Magnetoresistive Random Access Memory (MRAM)
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US116965112023Low Resistance Mgo Capping Layer for Perpendicularly Magnetized Magnetic Tunnel Junctions
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115732702023Electrical Testing Apparatus for Spintronics Devices
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115694412023Maintaining Coercive Field After High Temperature Anneal for Magnetic Device Applications with Perpendicular Magnetic Anistropy
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US115631702023Fully Compensated Synthetic Ferromagnet for Spintronics Applications
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites