Patents/Inventors

Huai-yuan Tseng

San Ramon, CAUS27 patents

23 Patents

US125913712026
Memory Sub-system for Memory Cell In-field Touch-up
Micron Technology, Inc.
0 cites
US125855832026
Multiple Write Programming for a Segment of a Memory Device
Micron Technology, Inc.
0 cites
US125790272026
Data Protection with Time-varying In-situ Data Refresh
Micron Technology, Inc.
0 cites
US125800312026
Level-based Data Refresh in a Memory Sub-system
Micron Technology, Inc.
0 cites
US125058972025
Program Refresh with Gate-induced Drain Leakage
Micron Technology, Inc.
0 cites
US123877812025
Corrective Reads with Improved Recovery from Data Retention Loss
Micron Technology, Inc.
0 cites
US123809542025
Dynamic 1-tier Scan for High Performance 3D NAND
Sandisk Technologies, Inc.
0 cites
US123341532025
Adaptive Pre-read Management in Multi-pass Programming
MICRON TECHNOLOGY, Inc.
0 cites
US123341542025
Write-once Memory Encoded Data
Micron Technology, Inc.
0 cites
US123224502025
Memory Programming Using Consecutive Coarse-fine Programming Operations of Threshold Voltage Distributions
Micron Technology, Inc.
0 cites
US123070902025
Memory Device Programming Technique for Increased Bits per Cell
Micron Technology, Inc.
0 cites
US122664072025
Conditional Valley Tracking During Corrective Reads
Micron Technology, Inc.
0 cites
US122493642025
Apparatus with Non-linear Delay Variations for Scheduling Memory Refresh Operations and Methods for Operating the Same
Micron Technology, Inc.
0 cites
US121310602024
Quick Charge Loss Mitigation Using Two-pass Controlled Delay
MICRON TECHNOLOGY, Inc.
0 cites
US120680342024
Two-pass Corrective Programming for Memory Cells That Store Multiple Bits and Power Loss Management for Two-pass Corrective Programming
MICRON TECHNOLOGY, Inc.
0 cites
US120514672024
Programming of Memory Cells Using a Memory String Dependent Program Voltage
SANDISK TECHNOLOGIES LLC
0 cites
US119949472024
Multi-layer Code Rate Architecture for Special Event Protection with Reduced Performance Penalty
Micron Technology, Inc.
0 cites
US119607222024
Memory Device Programming Technique for Increased Bits per Cell
Micron Technology, Inc.
0 cites
US117909922023
State Dependent VPVD Voltages for More Uniform Threshold Voltage Distributions in a Memory Device
Sandisk Technologies LLC
0 cites
US117587182023
Three Dimensional Memory Device Containing Truncated Channels and Method of Operating the Same with Different Erase Voltages for Different Bit Lines
SANDISK TECHNOLOGIES LLC
0 cites
US116994942023
Peak and Average ICC Reduction by Tier-based Sensing During Program Verify Operations of Non-volatile Memory Structures
Sandisk Technologies LLC
0 cites
US116369052023
Temperature Compensation for Unselected Sub-block Inhibit Bias for Mitigating Erase Disturb
Sandisk Technologies LLC
0 cites
US116003432023
Efficient Read of NAND with Read Disturb Mitigation
Sandisk Technologies LLC
0 cites