25 Patents
- US125385292026Epitaxial Fin Structures of FINFET Having an Epitaxial Buffer Region and an Epitaxial Capping Region
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US124083622025Method of Forming Devices with Strained Source/drain Structures
AIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US122887212025Fin Bending Reduction Through Structure Design
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122666552025Transistors with Recessed Silicon Cap and Method Forming Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122182222025Finfet Device and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US122182402025Source/drain Regions of Finfet Devices and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US121702282024Semiconductor Device and Methods of Manufacturing
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US120740712024Source/drain Structures and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120627202024Epitaxial Source/drain Structure and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120340612024Method for Forming Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120028542024Semiconductor Device and Method of Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US119488402024Protective Layer Over Finfet and Method of Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US118880462024Epitaxial Fin Structures of Finfet Having an Epitaxial Buffer Region and an Epitaxial Capping Region
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - 0 cites
- US117497522023Doping Profile for Strained Source/drain Region
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117356642023Source/drain Regions of FINFET Devices and Methods of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117356682023Interfacial Layer Between Fin and Source/drain Region
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US117107772023Semiconductor Device and Method for Manufacture
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - 0 cites
- US116109942023Epitaxial Source/drain Structure and Method of Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US116005342023Source/drain Structures and Method of Forming
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites