38 Patents
- US125882712026Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US125076012025Thermal Dispersion Layer in Programmable Metallization Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124329422025MIM Capacitor and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US124083542025Method to Reduce Breakdown Failure in a MIM Capacitor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124085672025Memory Device Structure with Data Storage Element
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US123641712025Resistive Memory Cell with Switching Layer Comprising One or More Dopants
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123566312025Feram with Laminated Ferroelectric Film and Method Forming Same
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123362012025Capacitor Structure and Method of Making the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
0 cites - 0 cites
- US122666042025Techniques to Inhibit Delamination from Flowable Gap-fill Dielectric
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122611972025Diffusion Barrier Layer in Top Electrode to Increase Break Down Voltage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122390352025Resistive Memory Cell Having a Low Forming Voltage
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US122258342025Method for Forming Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US121990292025MIM Capacitor with a Symmetrical Capacitor Insulator Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121781472024Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US121610572024Method for Forming Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US121375722024Ferroelectric Memory Device and Method of Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US120698672024Ferroelectric Random Access Memory Device with Seed Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120699712024Switching Layer Scheme to Enhance RRAM Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120211132024Amorphous Bottom Electrode Structure for MIM Capacitors
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119919372024Semiconductor Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - 0 cites
- US119161272024Multi-layer Electrode to Improve Performance of Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118959332024Resistive Memory Cell with Switching Layer Comprising One or More Dopants
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118879292024Techniques to Inhibit Delamination from Flowable Gap-fill Dielectric
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118442262023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US118008232023Method for Manufacturing Thermal Dispersion Layer in Programmable Metallization Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US117588302023Memory Device Structure with Protective Element
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116839992023Switching Layer Scheme to Enhance RRAM Performance
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116659092023Feram with Laminated Ferroelectric Film and Method Forming Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US116372392023High Yield RRAM Cell with Optimized Film Scheme
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116372402023Semiconductor Structure and Method for Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites - US115945932023Method to Reduce Breakdown Failure in a MIM Capacitor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites