Hsing-hsiang Wang

4 Patents

• US125937122026

  Method of Forming Opening in Passivation Layer and Structures Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US122198822025

  Memory Cell with Low Resistance Top Electrode Contact and Methods for Forming the Same

  Taiwan Semiconductor Manufacturing Company Limited

  0 cites
• US116995962023

  Metal Etching with in Situ Plasma Ashing

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US115456192023

  Memory Device Structure and Method for Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites