Hsing-chao Liu

4 Patents

• US125325372026

  Semiconductor Device with a Deep Trench Isolation Structure and Buried Layers for Reducing Substrate Leakage Current and Avoiding Latch-up Effect, and Fabrication Method Thereof

  Vanguard International Semiconductor Corporation

  0 cites
• US125139242025

  Semiconductor Device

  VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

  0 cites
• US119730212024

  Semiconductor Device and Method Forming the Same

  Vanguard International Semiconductor Corporation

  0 cites
• US117423892023

  Semiconductor Structure and Method for Forming the Same

  VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION

  0 cites