Hsin-yun Hsu

6 Patents

• US123548762025

  Gate Structure Passivating Species Drive-in Method and Structure Formed Thereby

  Taiwan Semiconductor Manufacturing Co., Ltd.

  0 cites
• US122782882025

  Fin Field-effect Transistor Device Having Hybrid Work Function Layer Stack

  Taiwan Semiconductor Manufacturing Company, Ltd.

  0 cites
• US120517532024

  Fin Field-effect Transistor Device Having Hybrid Work Function Layer Stack

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US120211452024

  Fin Field-effect Transistor Device Having Hybrid Work Function Layer Stack

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US118307422023

  Selective Capping Processes and Structures Formed Thereby

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US117106382023

  Gate Structure Passivating Species Drive-in Method and Structure Formed Thereby

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites