Patents/Inventors

Hsiao-hui Tseng

TainanTW15 patents

13 Patents

US125988252026
Substrate Contact in Wafer Backside
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124648392025
Vertical Gate Field Effect Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124380422025
High Capacitance MIM Device with Self Aligned Spacer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122611962025
Metal-insulator-metal Device Capacitance Enhancement
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122439072025
Multi-layer Trench Capacitor Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122118762025
Extra Doped Region for Back-side Deep Trench Isolation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US121549272024
Semiconductor Structure
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US120878012024
Deep Trench Isolations and Methods of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US119843532024
High Capacitance MIM Device with Self Aligned Spacer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119489492024
Vertical Gate Field Effect Transistor
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119161002024
Multi-layer Trench Capacitor Structure
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119013962024
Back Side Illuminated Image Sensor with Reduced Sidewall-induced Leakage
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US117283662023
Extra Doped Region for Back-side Deep Trench Isolation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites